Electric-field-induced Mott insulating states in organic field-effect transistors

TitleElectric-field-induced Mott insulating states in organic field-effect transistors
Publication TypeJournal Article
Year of Publication2002
AuthorsCepas, O., and McKenzie Ross H.
JournalPhysical Review B
Volume66
Issue21
Pagination-
AbstractWe consider the possibility that the electrons injected into organic field-effect transistors are strongly correlated. A single layer of acenes can be modeled by a Hubbard Hamiltonian similar to that used for the kappa-(BEDT-TTF)(2)X family of organic superconductors. The injected electrons do not necessarily undergo a transition to a Mott insulator state as they would in bulk crystals when the system is half-filled. We calculate the fillings needed for obtaining insulating states in the framework of the slave-boson theory and in the limit of large Hubbard repulsion U. We also suggest that these Mott states are unstable above some critical interlayer coupling or long-range Coulomb interaction.
DOI10.1103/PhysRevB.66.214528