High Performance p- and n-Type Light-Emitting Field-Effect Transistors Employing Thermally Activated Delayed Fluorescence

TitleHigh Performance p- and n-Type Light-Emitting Field-Effect Transistors Employing Thermally Activated Delayed Fluorescence
Publication TypeJournal Article
Year of Publication2018
AuthorsSobus, J., Bencheikh F., Mamada M., Wawrzinek R., Ribierre J. - C., Adachi C., Lo S. - C., and Namdas E. B.
JournalAdvanced Functional Materials
DOI10.1002/adfm.201800340